Press Release       Breakthrough in Vertical GaN LEDs Announced by High Brightness LED Startup Oriol, Inc. Santa Clara, California, USA, April 30, 2002— Oriol, Inc., an emerging and innovative producer of gallium nitride high brightness light emitting diode (GaN HB-LED) package-ready die, today announced the successful development of a new vertical HB-LED chip structure. Oriol's vertical GaN device is a breakthrough for blue spectrum HB-LEDs because it utilizes a proprietary sapphire substrate liftoff technique in combination with a bonded metallic base, resulting in substantially lower cost and higher brightness devices that are fully compatible with existing low-profile die mount techniques. These features are critical to the continued evolution of both power frugal applications, including cellular phone illumination, as well as super high brightness applications such as traffic signals, outdoor video signs, and solid-state white lighting. Vertical devices save space by requiring only a single wirebond (the connection which runs from the device to the leads on the package), using the bottom of the chip as the second electrical contact, thereby flowing current vertically through the device, with more efficient current spreading, increasing the light output. Vertical devices have previously been limited to GaN grown on silicon carbide (SiC) based substrates. Although conductive, SiC is opaque, and absorbs a substantial portion of the light being emitted. While sapphire is less expensive, and a more popular choice as a GaN substrate, it is non-conductive, requiring two wirebonds on top of each chip. With the electrical current traveling laterally between these two contacts the packaging efficiency is greatly reduced. While sapphire is transparent, enabling more light to escape from the chip, it unfortunately acts as a thermal insulator that traps heat, dramatically reducing the high operating current efficiency and ultimately limiting the available applications. Oriol has combined the best of both worlds by using sapphire as the initial GaN growth substrate then bonding a thermally and electrically conductive metal layer on top of the GaN. By then employing a proprietary lift-off technique, the sapphire substrate is lifted off the GaN, leaving it and the reflective base ready for the fabrication of vertical devices. The necessary patents have been filed for this unique lift-off technique and die structure, which are enabling production of durable 2" wafers, a size previously unavailable using conventional lift-off methods. The result of a vertical device being bonded to a reflective metal layer that exhibits low thermal resistance, and high electrical conductivity, is a highly efficient device that lends itself to thinner LED packaging while remaining rugged enough to retain compatibility with traditional die-mount techniques. Combined with the lower device cost and increased brightness, this approach is especially advantageous for backlight applications such as cellular phones, where a thinner die saves precious space, as well as for high-power/super-bright applications such as solid-state white lighting. The performance of Oriol's initial blue spectrum product line, when packaged, is projected to produce as high as 6 candela at 20mA forward current, when using 5mm, 15 degree viewing angle packaging. Candela is one measure of brightness commonly used with reference to packaged LEDs. "This vertical device truly differentiates Oriol from all other HB-LED chip makers," states their President, G. "Uncle Burt" Lancaster. "Customers will finally be able to break away from the previous choice between silicon carbide and sapphire-based devices which either require special handling or are limited in their performance. Our vertical GIGABRIGHT™ devices are the long awaited catalysts to enable new applications for lower power and higher brightness HB-LEDs." Engineering samples of the vertical GIGABRIGHT™ chip will be available within three months and production volumes are projected to ramp-up early in the 4th quarter. For more information on die or packaged lamps, visit www.oriolinc.com. For direct attention email info@oriolinc.com, call 408-327-9940 (Tom Jory, x225), or fax to 408-327-9944 (Attn: LED sales). About Oriol Oriol, Inc., is a USA-based, Santa Clara, California, gallium nitride high brightness light emitting diode (GaN HB-LED) privately funded startup, created two years ago by a unique team of individuals who bring a broad set of experiences in semiconductor-related industries including silicon, gallium arsenide (GaAs), GaN, gas & chemicals, plasma etching, wafer polishing, MEMS, and HB-LEDs. This eclectic experience base results in fresh ideas and new approaches to the challenges facing the GaN lighting community, and is the foundation for Oriol's, trademark tag line, "think outside the bulb™." Oriol is committed to continuous improvement in HB-LED efficiency while reducing costs, which combine to enable innovative HB-LED applications in the lighting industry. Oriol HB-LEDs allow lighting designers to break out of the limitations of the traditional "bulb" and create exciting, efficient, attractive, colorful, and reliable lighting effects in homes, offices, stores, signs, or any place where light is needed, indoors or out. Press Contact: Tom Jory Oriol, Inc. tom@oriolinc.com Tel +1 408-327-9940 x225 Fax +1 408-327-9944           © 2001 Oriol, Inc., Call: 408-327-9940